Dynamic command and/or address mirroring system and method for memory modules

ABSTRACT

A memory module includes a memory hub that couples signals to memory devices mounted on opposite first and second surfaces of a memory module substrate. The memory devices are mounted in mirrored configuration with mirrored terminals of memory devices on opposite surfaces being interconnected. A memory hub mounted on each module alters the configuration of address and/or command signals coupled to the memory devices depending upon whether the memory devices on the first surface of the substrate or the memory devices on the second surface of the substrate are being accessed. Alternatively, the configuration of the address and/or command signals coupled to mirrored memory devices may be altered by a register mounted on the substrate that is coupled to the memory devices or by a memory controller coupled directly to memory devices on one or more memory modules.

TECHNICAL FIELD

This invention relates to memory modules having memory devices mountedon opposite surfaces of a substrate, and more particularly to memorymodules having memory devices on opposite surfaces of a substrate.

BACKGROUND OF THE INVENTION

Semiconductor devices, such as memory devices, are normally in the formof a semiconductor substrate or chip mounted in a hermetically sealedpackage. An integrated circuit fabricated on the chip is then coupled toterminals that are accessible from outside the package. These externallyaccessible terminals can assume many forms, such as pins projectingoutwardly and then downwardly along opposite sides of the integratedcircuit package and terminal pads arranged in a group on the bottom ofthe integrated circuit package, which is known as a ball grid array, or“BGA” configuration.

Each externally accessible terminal of the integrated circuit package isnormally associated with a particular function. For example, in anintegrated memory device, a first set of externally accessible terminalsare input terminals for respective memory address bits A₀–A_(N), and asecond set of externally accessible terminals are input terminals forrespective command or status signals C₀–C_(N), such as RAS*, CAS*, and aclock signal. A third set of externally accessible terminals areinput/output terminals for respective data bits D₀–D_(N). Finally, afourth set of externally accessible terminals are reserved for power andground.

Although integrated circuits are commonly used singly in manyapplications, other types of integrated circuits are most commonly usedin groups. For example, memory devices in general, and dynamic randomaccess memory (“DRAM”) devices in particular, are commonly used ingroups as part of memory modules. Memory modules are generally in theform of an insulative substrate, such as a printed circuit board, havingseveral memory devices mounted on one or both surfaces of the substrate.Conductors couple the memory devices to connectors that are generallyformed by terminals extending along an edge of the substrate. One commonmemory module is a single in-line memory module, known as a “SIMM,”which includes a single row of memory devices extending across one orboth surfaces of the substrate. Another common memory module is a doublein-line memory module, known as a “DIMM,” which includes two rows ofmemory devices extending across one or both surfaces of the substrate.

A common phenomena associated with memory modules, whether SIMMs, DIMMsor some other variety, is the need for an ever increasing storagecapacity. For this reason, the capacity of the memory devices mounted onthe substrate, as well as the number of externally accessible terminalsneeded to address the memory devices, has continuously increased. Theneed for increased memory capacity also increases the need for memorymodules having a larger number of memory devices. As a result, memorydevices are now usually mounted on both sides of a memory modulesubstrate, and the spacing between memory devices has continued todecrease. The decreased spacing between memory devices and the increasednumber of terminals has made it more difficult to route conductors tothe externally accessible terminals of the memory devices.

One technique that has been used successfully to route conductors to alarge number of terminals of closely spaced memory devices is to usesubstrates having a large number of layers on which conductors areformed. However, it is relatively expensive to provide substrates havinga large number of layers, and a large number of closely spaced layerscan result in excessive cross-talk between conductors on differentlayers and excessive conductor capacitance.

Another technique that has made it easier to route conductors to memorydevice terminals is mirroring in which the terminals of each memorydevice mounted on one surface of the substrate are position directlyopposite corresponding terminals of a memory device mounted on theopposite surface of the substrate. This mirroring can occurhorizontally, in which corresponding terminals are at the same locationson opposite sides of the mirrored packages, or vertically, in whichcorresponding terminals are at the same locations above and below a lineextending across and bisecting the mirrored packages. In either case,mirroring has the advantage of allowing conductors to extend to a singlerespective location on the substrate, and to then connect to arespective terminal on each surface of the substrate at that location.Significantly, there is no need to route a conductor coupled to aterminal of an integrated circuit on one surface of the substrate to adifferent location for coupling to the corresponding terminal of anintegrated surface on the other surface of the substrate.

Although memory device mirroring has the advantage of allowing morecompact routing of conductors to the memory devices, it is not withoutsome disadvantages. For memory device mirroring to occur, two differentintegrated circuit packages must be developed so that correspondingterminals of the two packages are mirror images of each other. The twodifferent packages can theoretically use the same integrated circuitchip, but, in practice, this is not always feasible. In particular, itis important that the integrated circuits on one surface of thesubstrate respond to signals in the same manner as the integratedcircuits on the opposite surface of the substrate. For the circuits torespond in the same manner, it is important for the lengths ofcorresponding signal paths of the two circuits be identical. Not only isit sometimes difficult to route signal lines from a circuit node toeither of two different terminals, doing so creates an undesirable stubconnection to the signal path between the terminal and the circuit node.This stub connection can produce signal reflections that can degrade theperformance of the integrated circuit. For this reason, it can benecessary to fabricate two different integrated circuit chips, which arethe mirror images of each other, for placement in the respectivemirrored packages. The need to develop and stock two differentintegrated circuit packages, even if the same chip can be used for bothpackages, can significantly increase the cost of mirrored integratedcircuits.

To alleviate the above-described problems of mirroring integratedcircuits, programmable integrated circuits have been developed. Withreference to FIG. 1, an integrated circuit memory device 10 includes alarge number of terminals, although only terminals 12, 14 for RAS andCAS signals are shown. The RAS and CAS signals are horizontallymirrored, as explained above. The terminals 12, 14 are each coupled to arespective input of two multiplexers 16, 18. The output of themultiplexer 16 is coupled to a RAS signal node 20, and the output of themultiplexer 18 is coupled to a CAS signal node 22. The multiplexers 16,18 are controlled by a signal line coupled to an external terminal 26 ata predetermined location. The terminal 12 is coupled to a first input ofthe multiplexer 16 and to a second input of the multiplexer 18. Theterminal 14 is coupled to a second input of the multiplexer 16 and to afirst input of the multiplexer 18. As a result, a low applied to theterminal 26 causes the terminal 12 to be coupled to the RAS signal node20, and the terminal 14 to be coupled to the CAS signal node 22. A highapplied to the terminal 26 causes the terminal 12 to be coupled to theCAS signal node 22, and the terminal 14 to be coupled to the RAS signalnode 20.

In operation, two of the integrated circuit memory devices 10 a,b aremounted on opposite surfaces of a substrate as shown in FIGS. 2A and 2B,respectively. As a result, the RAS signal is coupled to the terminal 12of the memory devices 10 a and the terminal 14 of the memory device 10b. The CAS signal is coupled to the terminal 14 of the memory devices 10a and the terminal 12 of the memory device 10 b. However, the terminal26 of the memory device 10 a is coupled to ground potential, and theterminal 26 of the memory device 10 b is coupled to a supply voltage.Therefore, the multiplexer 16 (FIG. 1) couples the RAS signal to the RASsignal node 20 of both memory devices 10 a,b, and the multiplexer 18couples the CAS signal to the CAS signal node 22 of both memory devices10 a,b.

The technique explained with reference to FIGS. 1 and 2A,B has theadvantage of allowing mirroring to occur using a single integratedcircuit mounted on opposite sides of a substrate, and avoids many of theabove-mentioned disadvantages of using two different integratedcircuits. However, mirroring using an internal routing circuit, such asthe multiplexers 16, 18 shown in FIG. 1, has the disadvantage ofrequiring that a routing circuit for each terminal be fabricated on asemiconductor substrate, thereby using area that could be used for theintegrated circuit itself. As a result, the use of routing circuits cansignificantly increase the cost of memory devices, particularly in viewof the large number of terminals present in memory devices that eachrequire a routing circuit, as well as the large number of memory devicesincluded in many systems. The routing circuits can also introduceundesirable delays in the coupling of the RAS and CAS signals to theirrespective nodes 20, 22.

Another problem in routing conductors to memory devices in memorymodules occurs when the memory module includes a memory hub or registerthrough which signals are routed to and from the memory devices. Asshown in FIG. 3, a memory module 30 includes memory hub 32 mounted on asubstrate 34. The memory module 30 also includes a plurality of memorydevices mounted on the substrate 34, two of which 38, 40 are shown inFIG. 3. In the memory module 30 of FIG. 3, each signal transmitted andreceived by the memory hub 32 is transmitted and received on a first setof terminals coupled to the memory device 38 on the left of thesubstrate 34 and a second set of terminals coupled to the memory device40 on the right side of the substrate 34. One of the signals transmittedby the memory hub, i.e., the A₀ address bit, is shown in FIG. 3, andthis address bit is coupled to correspondingly positioned terminals ofthe memory devices 38, 40. However, since the A₀ terminal is located onthe left side of both memory devices 38, 40, the path to the A₀ terminalof the left memory device 38 is longer than the path to the A₀ terminalof the right memory device 40. As a result, the performance of the twomemory devices 38, 40 may not be symmetrical. A similar problem existswhen coupling signals from between memory devices and a register (notshown) of a registered memory module.

The above-described difficulties incurred in coupling signals to andfrom integrated circuits, such as memory devices, creates a need for amirroring technique that allows a single integrated circuit to bemounted on opposite surfaces of a substrate with correspondinglypositioned terminals coupled together, and which does not requireinternal routing circuitry in each memory device.

SUMMARY OF THE INVENTION

A memory module according to one aspect of the invention includes aninsulative substrate; on which a plurality of identical memory devicesmounted on first and second opposed surfaces of the insulativesubstrate. The memory devices are mounted on the substrate in a mirroredconfiguration. As a result, a plurality of terminals of each of thememory devices mounted on the first surface are interconnected torespective, correspondingly positioned terminals of a respective one ofthe memory devices mounted on the second surface. Address and commandsignals are coupled to the interconnected terminals. Significantly,either the address signals, the command signals or both the address andcommand signals are coupled to the interconnected terminals for aplurality of the memory devices in a first configuration if the memorydevices mounted on the first surface of the substrate are beingaccessed. In contrast these signals are coupled to the interconnectedterminals for a plurality of the memory devices in a secondconfiguration that is different from the first configuration if thememory devices mounted on the second surface of the substrate are beingaccessed. The memory devices in one or more memory modules may becoupled to a memory controller that alters the configuration of thesignals as indicated above. Alternatively, the configuration of thesignals may be altered by either a memory hub or a register mounted oneach of the memory modules.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a conventional integrated memory devicethat can be used in a memory module in mirrored fashion.

FIGS. 2A and 2B are terminal diagrams showing the routing of some of thesignals for the memory device of FIG. 1 when they are mounted onopposite surfaces of a memory module substrate.

FIG. 3 is a plan view of a conventional memory module including a memoryhub coupled to memory devices on opposite sides of the memory hub.

FIG. 4 is a block diagram of a computer system including several memorymodules according to one embodiment of the invention.

FIG. 5 is a block diagram of one embodiment of a memory controller thatmay be used in the computer system of FIG. 4.

FIG. 6 is a block diagram of one embodiment of a computer systemaccording to the present invention.

FIG. 7 is a block diagram of still another embodiment of a computersystem according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

A computer system 50 according to one embodiment of the invention isshown in FIG. 4. The computer system 50 includes a processor 54 forperforming various computing functions, such as executing specificsoftware to perform specific calculations or tasks. The processor 54includes a processor bus 56 that normally includes an address bus, acontrol bus, and a data bus. The processor bus 56 is typically coupledto a cache memory 58, which, is typically static random access memory(“SRAM”) device. Finally, the processor bus 56 is coupled to a systemcontroller 60, which is also sometimes referred to as a bus bridge.

The system controller 60 contains a memory hub controller 62 that iscoupled to the processor 54. The memory hub controller 62 is alsocoupled to several memory modules 64 a–n, and the memory modules 64 a–nare coupled to each other, through a downstream bus 66 and an upstreambus 68, which couple data, address and/or control signals away from ortoward, respectively, the memory hub controller 62. Each of the memorymodules 64 a–n includes a memory hub 76 mounted on a substrate 78. Thememory hub 76 is coupled to several memory devices 80 a,b on one side ofthe memory module 64 through a first set of command, address and databuses 82, and to several memory devices 86 a,b on the other side of thememory module 64 through a second set of command, address and data buses88. The memory devices 80 a,b and 86 a,b are identical to each other.The memory hub 76 efficiently routes memory requests and responsesbetween the memory hub controller 62 and the memory devices 80, 86.Computer systems employing this architecture can have a higher bandwidthbecause the processor 54 can access one memory module 64 a–n whileanother memory module 64 a–n is responding to a prior memory access. Forexample, the processor 54 can output write data to one of the memorymodules 64 a–n in the system while another memory module 64 a–n in thesystem is preparing to provide read data to the processor 54. Theoperating efficiency of computer systems using a memory hub architecturecan make it more practical to vastly increase data bandwidth of a memorysystem. A memory hub architecture can also provide greatly increasedmemory capacity in computer systems.

The system controller 60 also serves as a communications path to theprocessor 54 for a variety of other components. More specifically, thesystem controller 60 includes a graphics port that is typically coupledto a graphics controller 90, which is, in turn, coupled to a videoterminal 92. The system controller 60 is also coupled to one or moreinput devices 94, such as a keyboard or a mouse, to allow an operator tointerface with the computer system 50. Typically, the computer system 50also includes one or more output devices 96, such as a printer, coupledto the processor 54 through the system controller 60. One or more datastorage devices 98 are also typically coupled to the processor 54through the system controller 60 to allow the processor 54 to store dataor retrieve data from internal or external storage media (not shown).Examples of typical storage devices 98 include hard and floppy disks,tape cassettes, and compact disk read-only memories (CD-ROMs).

With further reference to FIG. 4, the memory devices 80 a and 86 a aremounted on a first surface 100 a of the substrate 78, and the memorydevices 80 b and 86 b are mounted on a second surface 100 b of thesubstrate 78. The memory devices 80 a, 86 a are preferably mounteddirectly opposite the memory devices 80 b, 86 b, respectively, and theiradjacent terminals are coupled to each other and to signal lines of thebuses 82, 88, respectively. As a result, a terminal located at the upperleft-hand corner of one of the memory devices 80 a is coupled to acorrespondingly positioned terminal located at the upper right-handcorner of the opposing memory device 80 b, for example.

The terminals of the memory devices 80, 86 are preferably arranged sothat data bus terminals of the memory devices 80 a, 86 a are coupled todata bus terminals of the memory devices 80 b, 86 b, respectively, onthe opposite surface of the substrate 78. Data signals applied to theinterconnected terminals of the memory devices will therefore be writtento the memory devices 80 a, 86 a mounted on the first surface 100 a asdata bits that are different from the data bits written to the memorydevices 80 b, 86 b mounted on the second surface 100 b. For example, adata signal for data bit D₁ may be written to a memory device 80 a as aD₁ bit and written to a memory device 80 b as a D₁₅ bit. However, whenthe same data signals are read from the memory devices 80 a and 80 b,the data signal will be coupled to the signal line for the D₁ data biteven though the data signal was read from the D₁₅ bit of the memorydevice 80 b. Therefore, as long as the data bus terminals of the memorydevices 80 a, 86 a are coupled to the data bus terminals of the memorydevices 80 b, 86 b, respectively, data will be properly written to andread from the memory devices 80, 86, assuming that all of the data busterminals to which the data bits are coupled are associated with thesame data strobe signal.

Unlike the data bus terminals of the memory devices 80, 86, the addressand control bus terminals of the memory devices 80, 86 are notinterchangeable. Therefore, an address signal coupled to a terminal ofthe memory device 80 a cannot be simply coupled to a correspondinglypositioned terminal of an opposing memory device 80 b. Instead, eachaddress and control signal must be coupled to a specific terminal ofeach of the memory devices 80, 86 regardless of the location of thememory devices. Rather than using the conventional approaches of usingdifferent memory devices having different terminal configurations orrouting signals to the proper signal nodes, the address and controlsignals are coupled to the proper terminals of the memory devices 80, 86by the memory hub 76 coupling different signals to the same lines of thebuses 82, 88 depending upon which memory device 80, 86 is beingaccessed. For example, if the A₀ address bit of the memory device 80 ais connected to the A₁₀ address bit of the opposing memory device 80 b,the memory hub 76 will couple an address signal for bit A₀ to a specificsignal line of the bus 82 if the memory device 80 a is being addressed,and it may couple an address signal for bit A₁₀ to the same signal lineof the bus 82 if the memory device 80 b is being addressed. Conversely,the memory device will couple an address signal for bit A₀ to one signalline of the bus 82 if the memory device 80 a is being addressed, and itwill couple the address signal for bit A₀ to another signal line of thebus 82 if the memory device 80 b is being addressed. Different addressand control signals are also coupled to the same lines of the bus 88depending on whether memory device 86 a or 86 b is being accessed.

The memory devices 80, 86 may be either of two types of memory deviceseach of which operates in either of two modes. Furthermore, the memorydevices 80, 86 have different terminal assignments depending on whichmode of operation is used by the memory devices 80, 86. For example, asis known to one skilled in the art, DRAM memory devices operating in onedouble data rate (“DDR”) mode known as the “DDR2” mode use one set ofterminal assignments, and, DRAM memory devices operating in another DDRmode known as the “DDR3” mode, use another set of terminal assignments.For example, the same terminal to which an A₅ address bit is coupled tomemory devices operating in the DDR2 mode will receive an A₁₂ addressbit for memory devices operating in the DDR3 mode. In each case, thememory hub 76 will couple the proper signal to each signal line of eachof the buses 82, 88 depending on: (1) whether the memory devices 80, 86are of the type that operate in the DDR2 mode or the DDR3 mode; (2)whether the memory devices 80, 86 are to the left of the memory hub 76and are thus coupled to the hub 76 through the bus 82 or to the right ofthe memory hub 76 and are thus coupled to the hub 76 through the bus 88;and (3) whether the memory devices 80, 86 are mounted on the firstsurface 100 a of the substrate 78 or the second surface 100 b of thesubstrate 78.

In one embodiment of the invention, the memory hub 76 will couple signalto the memory devices 80, 86 according to Table 1 below in which A₀–A₁₆are row and column addresses, BA₀–BA₃ are bank addresses, CASZ is anactive low column address strobe signal, CSZ0 and CSZ1 are active lowchip select signals to select memory devices 80, 86 on the first surface100 a and second surface 100 b, respectively, ODT0 and ODT1 are signals,RASZ is an active low row address strobe signal and WEZ is an active lowwrite enable signal.

TABLE 1 Hub Left Hub Right 82a, 86a 82b, 86b 82a, 86a 82b, 86b TerminalTerminal DDR2 DDR2 DDR3 DDR3 Location Location CS₀ CS₁ CS₀ CS₁ C₅ C₂₇ A₀A₁₀ A₃ A₀ C₁₁ B₂₁ A₁ A₂ A₆ A₅ C₆ C₂₆ A₂ A₁ BA₃ BA₂ C₁₂ B₂₀ A₃ A₄ A₂ A₁B₅ B₂₇ A₄ A₃ A₁ A₂ B₁₁ A₂₁ A₅ A₆ A₁₂ A₁₃ B₆ B₂₆ A₆ A₅ A₅ A₆ B₁₂ C₁₉ A₇A₈ A₇ A₈ A₅ B₂₉ A₈ A₇ A₈ A₇ A₁₃ A₁₉ A₉ A₁₁ A₉ A₁₁ D₁₂ C₂₁ A₁₀ A₀ BA₂ BA₃A₄ A₂₉ A₁₁ A₉ A₁₁ A₉ A₁₂ A₂₀ A₁₂ A₁₃ A₄ A₁₄ A₆ A₂₇ A₁₃ A₁₂ A₁₃ A₁₂ A₁₁A₂₂ A₁₄ A₁₅ A₁₅ A₁₅ A₇ A₂₈ A₁₅ A₁₄ A₁₄ A₄ A₁₀ A₂₃ A₁₆ A₁₆ A₁₆ A₁₆ D₇ D₂₇BA₀ BA₀ BA₁ BA₀ E₁₃ D₂₀ BA₁ CASZ A₁₀ WEZ E₇ E₂₅ BA₂ BA₂ CSZ₁ CSZ₁ F₁₂F₂₂ BA₃ BA₃ ODT₁ ODT₁ D₈ D₂₆ CASZ BA₁ CASZ RASZ D₆ D₂₈ CSZ₀ CSZ_(O) WEZA₁₀ D₁₁ D₂₁ CSZ₁ CSZ₁ BA₀ BA₁ C₉ E₂₈ ODT₀ ODT₀ ODT₀ ODT₀ D₁₃ C₂₀ ODT₁ODT₁ A₀ A₃ F₉ E₂₂ RASZ WEZ CSZ₀ CSZ₀ E₁₀ D₂₂ WEZ RASZ RASZ CASZ

In one embodiment, the memory hub 76 has externally accessible terminalsarranged in a grid, and the location of each terminal is designated by aletter designating the row of the terminal and a number designating thecolumn of the terminal. For example, A1 is a terminal located at theupper left hand corner of the memory hub 76, and F29 is a terminallocated at the lower right hand corner of the memory hub 76. Thelocations of these terminals that are coupled to the memory devices 80through the bus 82 are listed in the first column of Table 1, and thelocations of these terminals that are coupled to the memory devices 86through the bus 88 are listed in the second column of Table 1. Thesignals applied to the terminals of the memory hub 76 when the memorydevices 82 a, 86 a on the first surface 100 a of the substrate 78 arebeing accessed and the devices 82 a, 86 a are of the type operating inthe DDR2 mode are listed in the third column of Table 1. The signalsapplied to the terminals of the memory hub 76 when the memory devices 82b, 86 b on the second surface 100 b are being accessed and the devices82 b, 86 b are of the type operating in the DDR2 mode are listed in thefourth column of Table 1. The signals applied to the terminals of thememory hub 76 when the memory devices 82 a, 86 a are of the typeoperating in the DDR3 mode and are being accessed are listed in thefifth column of Table 1. Finally, the signals applied to the terminalsof the memory hub 76 when the memory devices 82 b, 86 b are of the typeoperating in the DDR3 mode and are being accessed are listed in thesixth column of Table 1.

For example, the C5 terminal of the memory hub 76, which is coupled to asignal line of the bus 82, receives the A₀ address bit when the memorydevices 80 a are being accessed and they are of the type operating inthe DDR2 mode, and it receives the A₃ address bit when the memorydevices 80 a are being accessed and they are of the type operating inthe DDR3 mode. If the memory devices 86 a are being accessed, the C27terminal of the memory hub 76, which is coupled to a signal line of thebus 88, receives the A₀ address bit when the memory devices 86 a arebeing accessed and they are of the type operating in the DDR2 mode, andit receives the A₃ address bit when the memory devices 80 a are beingaccessed and they are of the type operating in the DDR3 mode. If thememory devices 80 b are being accessed, the C5 terminal of the memoryhub 76, which is coupled to a signal line of the bus 82, receives theA₁₀ address bit when the memory devices 80 b are of the type operatingin the DDR2 mode, and it receives the A₀ address bit when the memorydevices 80 b are being accessed and they are of the type operating inthe DDR3 mode. If the memory devices 86 b are being accessed, the C27terminal of the memory hub 76, which is coupled to a signal line of thebus 88, receives the A₁₀ address bit when the memory devices 80 b are ofthe type operating in the DDR2 mode, and it receives the A₀ address bitwhen the memory devices 80 b are being accessed and they are of the typeoperating in the DDR3 mode.

The routing of signals to the terminals of the memory devices 80, 86based on whether they are of the type operating in the DDR2 or the DDR3mode is static since it does not change during the operation of thememory devices 80, 86. However, the routing of signals from either theleft set of terminals A1–F13 of the memory hub 76 to the memory devices80 or from right set of terminals A19–29 of the memory hub 76 and to thememory devices 86 is dynamic, and therefore changes rapidly while thememory devices 80, 86 are being accessed.

Although the address and most of the control signals must be dynamicallymirrored, in one embodiment some control signals can be applied tomultiple symmetrically positioned terminals of the memory device 80, 86so that dynamic mirroring is not required. For example, a first clockenable CKE signal is applied to a terminal of the memory device 80, anda second clock enable CKE signal is applied to a terminal of the memorydevice 86 regardless of whether the memory devices 80, 86 are of thetype operating in the DDR2 or the DDR3 mode. Regardless of which memorydevice 80, 86 is being addressed, the addressed memory device willreceive a CKE signal at the appropriate terminal. The signals for whichdynamic mirroring is not required, as well as the locations of theterminals of the memory hub 76 to which those signals are applied in oneembodiment, are listed in Table 2, below.

TABLE 2 Hub Left Hub Right 82a, 86a 82b, 86b 82a, 86a 82b, 86b TerminalTerminal DDR2 DDR2 DDR3 DDR3 Location Location CS₀ CS₁ CS₀ CS₁ D₉ E₁₉CKE_(O) CKE_(O) CKE_(O) CKE_(O) F₆ E₂₉ CKE₁ CKE₁ CKE₁ CKE₁ F₈ F₂₆CLK_(O) CLK_(O) CLK_(O) CLK_(O) G₁₁ G₂₄ CLK₁ CLK₁ CLK₁ CLK₁ F₇ F₂₅ CLKZ₀CLKZ₀ CLKZ₀ CLKZ₀ G₁₂ G₂₃ CLKZ₁ CLKZ₁ CLKZ₁ CLKZ₁ F₁₃ RESET RESET

The memory hub 76 used in the memory modules 64 a –n of FIG. 4 includesa memory controller, and one embodiment of a memory controller 200 thatcan be used is shown in FIG. 5. Briefly, the memory controller 200receives high-level macro commands, such as ACTIVATE ROW, COLUMN, andPRECHARGE, converts these commands to DRAM commands, schedules the DRAMcommands for outputting at the proper time, and routes the scheduledDRAM commands to the correct terminals of the memory hub 76, aspreviously explained. With reference to FIG. 5, the memory controller200 includes a command queue 204 that receives the high-level macrocommands from the memory hub controller 62 (FIG. 4). The Command Queue204 translates the received macro commands to DRAM command signals, suchas RASZ, CASZ, WEZ, etc., places the command signals in a queue in theorder that their corresponding macro commands were received, and thenoutputs the commands in the proper order. The Command Queue 204 alsoreceives address signals, which are placed in a queue in the order thatthey were received, and they are subsequently output in the properorder. The command and address signals that are output from the CommandQueue 204 are the command and address signals listed in Tables 1 and 2.

The DRAM command signals and address signals from the Command Queue 204are applied to a Command Scheduler 210, which spaces the command andaddress signals apart from each other with the proper delay. The delayis measured in periods of a clock CLK signal, which is also applied tothe Command Scheduler 210. For example, the Command Scheduler 210 mightschedules the CASZ to be output three clock periods after the RASZsignals was output from the Command Scheduler 210. When the command andaddress signals are output from the Command Scheduler 210, they arestored in a micro Command Shifter 214, which is basically a shiftregister that is driven by the CLK signal. The command and addresssignals are stored in the Command Shifter 214 in the proper order andwith the proper spacing because they were shifted into the CommandShifter 214 from the Command Scheduler 210 in that manner.

When the properly timed and ordered command and address signals areshifted out of the Command Shifter 214 responsive to the CLK signal,they are applied to one input of a Multiplexer 220. The Multiplexer 220also receives the DRAM command and address signals at a second inputdirectly from the Command Queue 204. In operation, the Multiplxer 220couples the command and address signals to its output directly from theCommand Shifter 214 as these signals are received when the memorydevices 80, 86 have been idle. As a result, the latency penalty thatwould be incurred in being coupled through the Command Scheduler 210 andthe Micro Command Shifter 214 is avoided. After the initial command andaddress signals have been coupled to the output of the Multiplexer 220,the Multiplexer 220 selects the output of the Micro Command Shifter 214for coupling to its output.

The command and address signals at the output of the Multiplexer 220 areapplied to Signal Swap Multiplexers 230 that are controlled by a CONFIGcommand coupled to the Multiplexers 230 through a bus 232. The CONFIGcommand indicates whether the memory devices 80, 86 are of the typeoperating in the DDR2 or DDR3 modes. The Multiplexers 230 are alsocontrolled by CSZ₀ and CSZ₁ signals, which indicate whether the memorydevices 80 a, 86 a on the first surface 100 a or the memory devices 80b, 86 b on the second surface 100 b are being accessed. The Signal SwapMultiplexers 230 can be implemented using a large number of individualmultiplexers arranged in a matrix in a manner that will be apparent toone skilled in the art. The Signal Swap Multiplexers 230 route thecommand and address signals to the terminals of the memory hub 76 asshown in Tables 1 and 2.

The properly routed and timed command and address signals are coupledfrom the Signal Swap Multiplexers 230 to Ring Buffers 240, 242. The RingBuffer 240 is coupled through the bus 82 (FIG. 4) to the memory devices80 on the left hand side of the memory modules 64, and the Ring Buffer242 is coupled through the bus 88 to the memory devices 86 on the righthand side of the memory modules 64. Each of the Ring Buffers 240, 242 isbasically a first-in, first-out buffer that is driven by one of theclock signals CLK₀, CLK₁, CLKZ₀ or CLKZ₁ that is applied to the memorydevices 80, 86. The command and address signals are therefore shiftedfrom the Ring Buffers 240, 242 and applied to the terminals of thememory hub 76 in synchronism with the operation of the memory devices80, 86.

Although the memory controller 200 can be used in the memory hub 76 inthe computer architecture shown in FIG. 4, it can also be used as astand-along memory controller in the computer system 300 shown in FIG.6. The computer system 300 uses many of the same components that areused in the computer system 50 of FIG. 4. Therefore, in the interests ofbrevity, these components have been provided with the same referencenumerals, and an explanation of their operation will not be repeated.The computer system 300 differs from the computer system 50 by usingmemory modules 310 that do not contain a memory hub. Instead, the memorydevices 80, 86 in each memory module 310 are coupled directly to thememory controller 200 in the system controller 60 through a memory bus320. The memory controller 200 applies the command and address signalsshown in Tables 1 and 2 to the signal lines of the bus 320 depending onwhich memory devices 80 a, 86 a, 80 b or 86 b are being accessed andwhether the memory devices 80, 86 are of the type operating in eitherthe DDR2 mode or the DDR3 mode, as explained above and as shown in Table1.

Another embodiment of a computer system 400 according to the inventionis shown in FIG. 7. The computer system 400 also uses many of the samecomponents that are used in the computer systems 50 and 300 of FIGS. 4and 6, respectively, and an explanation of the operation of thesecomponents will not be repeated. The computer system 400 differs fromthe computer system 300 by using memory modules 410 having registers 420coupling the command and address signals to the memory devices 80, 86.Registered memory modules are well known in the art. The computer system400 uses a memory controller 430 in the system controller 60 that mayoperate in the same manner as the memory controller 200 to apply thecommand and address signals to the registers 420 depending on whichmemory devices 80 a, 86 a, 80 b or 86 b are being accessed and whetherthe memory devices 80, 86 are of the type operating in either the DDR2mode or the DDR3 mode. Alternatively, the memory controller 420 mayoperate in a conventional manner, and circuitry like the Signal SwapMultiplexers 230 shown in FIG. 5 may be included in each register 420 toapply the command and address signals to the memory devices 80, 86depending on which memory devices 80 a, 86 a, 80 b or 86 b are beingaccessed and whether the memory devices 80, 86 are of the type operatingin either the DDR2 mode or the DDR3 mode. Other variations will beapparent to one skilled in the art.

The various embodiments of the inventions have the advantage of routingthe proper command and address signals to the memory devices 80, 86 atthe memory controller level rather than at each of the memory devicelevel. As a result, the number of circuits needed to perform thisfunction is markedly less than if such circuitry was in each of thememory devices 80, 86. The various embodiments thus allow a mirroringwith single memory device used on both surfaces of the substrate and onboth the left and right sides of the substrate. From the foregoing itwill be appreciated that, although specific embodiments of the inventionhave been described herein for purposes of illustration, it will beunderstood by one skilled in the art that various modifications may bemade without deviating from the spirit and scope of the invention. Forexample, instead of using registered memory modules, circuitry like theSignal Swap Multiplexers 230 could simply be used on each memory module.Accordingly, the invention is not limited except as by the appendedclaims.

1. A method of accessing a plurality of memory devices in which aplurality of terminals of a first of the memory devices areinterconnected with a corresponding plurality of terminals of a secondof the memory devices in a manner that causes the first and secondmemory devices to function differently responsive to respective addressor control signals applied to the interconnected terminals, the methodcomprising: providing a substrate with first and second surfaces, thesubstrate having the first of the memory devices mounted on the firstsurface and the second of the memory devices mounted on the secondsurface; if the first memory device is being accessed, applying controlor address signals to the interconnected terminals according to a firstset of terminal assignments; and if the second memory device is beingaccessed, applying control or address signals to the interconnectedterminals according to a second set of terminal assignments that is atleast in part different from the first set of terminal assignments. 2.The method of claim 1 wherein the parts of the first and second terminalassignments that are different comprise address terminal assignments. 3.The method of claim 1 wherein the parts of the first and second terminalassignments that are different comprise control terminal assignments. 4.The method of claim 1, further comprising applying data signals to theinterconnected terminals, and wherein the data signals are applied tothe interconnected terminals according to a common set of terminalassignments regardless of whether the first memory device or the secondmemory device is being accessed.
 5. The method of claim 1 wherein thememory devices comprise dynamic random access memory devices.
 6. Amethod of applying address and control signals to a plurality ofidentical memory devices in which a plurality of terminals of a first ofthe memory devices are interconnected with a corresponding plurality ofterminals of a second of the memory devices in mirrored configuration,the first and second memory devices functioning differently responsiveto respective address or control signals applied to the interconnectedterminals, the method comprising: applying a set of control signals or aset of address signals to the interconnected terminals in a firstarrangement if the first memory device is being accessed; and applying aset of control signals or a set of address signals to the interconnectedterminals in a second arrangement if the second memory device is beingaccessed, the second arrangement being different from the firstarrangement.
 7. The method of claim 6 wherein the act of applying a setof control signals or a set of address signals to the interconnectedterminals in first and second arrangements that are different from eachother comprise applying a set of control signals to the interconnectedterminals in first and second arrangements that are different from eachother.
 8. The method of claim 6 wherein the act of applying a set ofcontrol signals or a set of address signals to the interconnectedterminals in first and second arrangements that are different from eachother comprise applying a set of address signals to the interconnectedterminals in first and second arrangements that are different from eachother.
 9. The method of claim 6 wherein the act of applying a set ofcontrol signals or a set of address signals to the interconnectedterminals in first and second arrangements that are different from eachother comprise applying a set of both address signals and controlsignals to the interconnected terminals in first and second arrangementsthat are different from each other.
 10. The method of claim 6, furthercomprising applying data signals to the interconnected terminals in acommon arrangement regardless of whether the first memory device isbeing accessed or the second memory device is being accessed.
 11. Themethod of claim 6 wherein the memory devices comprise dynamic randomaccess memory devices.
 12. A method of applying address or controlsignals to a plurality of identical memory devices mounted on first andsecond surfaces of memory module substrate in a mirrored configurationso that a plurality of terminals of each of the memory devices mountedon the first surface are interconnected to respective, correspondinglypositioned terminals of a respective one of the memory devices mountedon the second surface, such that the first and second memory devicesfunction differently responsive to respective address or control signalsapplied to the interconnected terminals the method comprising: couplingaddress or control signals to the interconnected terminals for aplurality of the memory devices in a first configuration if the memorydevices mounted on the first surface of the substrate are beingaccessed; and coupling address or control signals to the interconnectedterminals for a plurality of the memory devices in a secondconfiguration that is different from the first configuration if thememory devices mounted on the second surface of the substrate are beingaccessed.
 13. The method of claim 12 wherein the acts of couplingaddress or control signals to the interconnected terminals in the firstor second configuration comprises: coupling address or control signalsto the memory module; and within the memory module, re-arranging thesignals coupled to the memory module to either the first configurationor the second configuration prior to coupling the address or controlsignals to the interconnected terminals.
 14. The method of claim 13wherein the act of re-arranging the signals coupled to the memory moduleto either the first configuration or the second configuration comprisesre-arranging the signals in a memory hub that is structured toindependently access the memory devices.
 15. The method of claim 12wherein the act of coupling address or control signals to theinterconnected terminals for a plurality of the memory devices in afirst or second configuration comprises coupling address signals to theinterconnected terminals in a first or second configuration.
 16. Themethod of claim 12 wherein the act of coupling address or controlsignals to the interconnected terminals for a plurality of the memorydevices in a first or second configuration comprises coupling controlsignals to the interconnected terminals in a first or secondconfiguration.
 17. The method of claim 12, further comprising applyingdata signals to the interconnected terminals in a common configurationregardless of whether the memory devices being accessed are mounted onthe first surface of the substrate or the second surface of thesubstrate.
 18. The method of claim 12 wherein the memory devicescomprise dynamic random access memory devices.
 19. A memory module,comprising: an insulative substrate; a plurality of identical memorydevices mounted on first and second opposed surfaces of the insulativesubstrate, the memory devices being mounted on the substrate in amirrored configuration so that a plurality of terminals of each of thememory devices mounted on the first surface are interconnected torespective, correspondingly positioned terminals of a respective one ofthe memory devices mounted on the second surface, the first and secondmemory devices functioning differently responsive to respective addressor control signals applied to the interconnected terminals; and a memoryaccess device mounted on the substrate, the memory access device havinga plurality of terminals that are coupled through the substrateconductors to respective ones of the interconnected terminals, thememory access device being operable to receive a memory request and, inresponse, to couple address and control signals to the interconnectedterminals for a plurality of the memory devices, the address or controlsignals being coupled to the interconnected terminals in a firstconfiguration if the memory devices mounted on the first surface of thesubstrate are being accessed, and the address or control signals beingcoupled to the interconnected terminals in a second configuration thatis different from the first configuration if the memory devices mountedon the second surface of the substrate are being accessed.
 20. Thememory module of claim 19 wherein the memory access device is centrallyposition on the insulative substrate, and wherein the memory devices arepositioned to both sides of the memory access device, the memory accessdevice being operable to couple respective sets of address or controlsignals in the first or second configuration to the memory devices oneach side of the memory access device.
 21. The memory module of claim 19wherein the memory access device comprises a memory hub that isstructured to generate the address and control signals to access thememory devices responsive to the memory requests.
 22. The memory moduleof claim 19 wherein the memory hub comprises: a command queue that isoperable to receive the memory requests, the memory queue further beingoperable to convert the memory requests into respective sets of commandand address signals and to output the command and address signals in theorder that the respective memory requests were received; a commandscheduler coupled to the command queue to receive the command andaddress signals from the command queue, the command scheduler arrangingthe timing of the command and address signals; a micro command shiftercoupled to receive the command and address signals from the commandscheduler after the timing of the command and address signals have beenarranged, the micro command shifter being operable to output the commandand address signals in synchronism with the operation of the memorydevices; and a multiplexer coupled to the micro command shifter toreceive the command signals or the address signals from the microcommand shifter, the multiplexer being operable to arrange the commandor address signals in either the first configuration or the secondconfiguration depending on whether the memory devices on the firstsurface or the memory devices on the second surface are being accessed,the multiplexer being operable to couple the command or address signalsin either the first configuration or the second configuration to theinterconnected terminals.
 23. The memory module of claim 22, furthercomprising a ring buffer coupled between the multiplexer and the memorydevices.
 24. The memory module of claim 19 wherein the memory accessdevice comprises a register that is structured to receive and storeaddress and control signals forming each of the memory requests, andcouple the stored address and control signals to the memory devices. 25.The memory module of claim 19 wherein the memory devices each comprise adynamic random access memory device.
 26. A processor-based system,comprising: a processor having a processor bus; a system controllercoupled to the processor bus, the system controller having a peripheraldevice port, the system controller further comprising a controllercoupled to a system memory port; at least one input device coupled tothe peripheral device port of the system controller; at least one outputdevice coupled to the peripheral device port of the system controller;at least one data storage device coupled to the peripheral device portof the system controller; and a memory module coupled to the systemmemory port of the system controller, the memory module comprising: aninsulative substrate; a plurality of identical memory devices mounted onfirst and second opposed surfaces of the insulative substrate, thememory devices being mounted on the substrate in a mirroredconfiguration so that a plurality of terminals of each of the memorydevices mounted on the first surface are interconnected to respective,correspondingly positioned terminals of a respective one of the memorydevices mounted on the second surface, the first and second memorydevices functioning differently responsive to respective address orcontrol signals applied to the interconnected terminals; and a memoryaccess device mounted on the substrate, the memory access device havinga plurality of terminals that are coupled through the substrateconductors to respective ones of the interconnected terminals, thememory access device being coupled to the controller to receive a memoryrequest from the controller and, in response, to couple address andcontrol signals to the interconnected terminals for a plurality of thememory devices, the address or control signals being coupled to theinterconnected terminals in a first configuration if the memory devicesmounted on the first surface of the substrate are being accessed, andthe address or control signals being coupled to the interconnectedterminals in a second configuration that is different from the firstconfiguration if the memory devices mounted on the second surface of thesubstrate are being accessed.
 27. The processor-based system of claim 26wherein the memory access device is centrally position on the insulativesubstrate, and wherein the memory devices are positioned to both sidesof the memory access device, the memory access device being operable tocouple respective sets of address or control signals in the first orsecond configuration to the memory devices on each side of the memoryhub.
 28. The processor-based system of claim 26 wherein the memoryaccess device comprises a memory hub that is operable to generate theaddress and command signals in response to a higher level memory requestfrom the controller.
 29. The processor-based system of claim 28 whereinthe memory hub comprises: a command queue that is operable to receivethe memory requests, the memory queue further being operable to convertthe memory requests into respective sets of command and address signalsand to output the command and address signals in the order that therespective memory requests were received; a command scheduler coupled tothe command queue to receive the command and address signals from thecommand queue, the command scheduler arranging the timing of the commandand address signals; a micro command shifter coupled to receive thecommand and address signals from the command scheduler after the timingof the command and address signals have been arranged, the micro commandshifter being operable to output the command and address signals insynchronism with the operation of the memory devices; and a multiplexercoupled to the micro command shifter to receive the command signals orthe address signals from the micro command shifter, the multiplexerbeing operable to arrange the command or address signals in either thefirst configuration or the second configuration depending on whether thememory devices on the first surface or the memory devices on the secondsurface are being accessed, the multiplexer being operable to couple thecommand or address signals in either the first configuration or thesecond configuration to the interconnected terminals.
 30. Theprocessor-based system of claim 29, further comprising a ring buffercoupled between the multiplexer and the memory devices.
 31. Theprocessor-based system of claim 26 wherein the memory devices eachcomprise a dynamic random access memory device.
 32. The processor-basedsystem of claim 26 wherein the memory access device comprises a registerthat is operable to store the address and command signals received fromthe controller, and to subsequently couple the stored address andcommand signals to the memory devices.
 33. A processor-based system,comprising: a processor having a processor bus; a system controllercoupled to the processor bus, the system controller having a peripheraldevice port and a system memory port; at least one input device coupledto the peripheral device port of the system controller; at least oneoutput device coupled to the peripheral device port of the systemcontroller; at least one data storage device coupled to the peripheraldevice port of the system controller; at least one memory module coupledto the system memory port of the system controller, the memory modulecomprising: an insulative substrate; and a plurality of identical memorydevices mounted on first and second opposed surfaces of the insulativesubstrate, the memory devices being mounted on the substrate in amirrored configuration so that a plurality of terminals of each of thememory devices mounted on the first surface are interconnected torespective, correspondingly positioned terminals of a respective one ofthe memory devices mounted on the second surface, the memory devices oneach surface of the substrate functioning differently responsive torespective address or control signals applied to the interconnectedterminals, the interconnected terminals of the at least one memorymodule being coupled to the to the system memory port of the systemcontroller; and a memory controller coupled to the system memory port ofthe system controller, the memory controller being operable to coupleaddress and control signals to the interconnected terminals of the atleast one memory module in a first configuration if the memory devicesmounted on the first surface of the substrate of the at least one memorymodule are being accessed, and the address or control signals beingcoupled to the interconnected terminals of the at least one memorymodule in a second configuration that is different from the firstconfiguration if the memory devices mounted on the second surface of thesubstrate of the at least one memory module are being accessed.
 34. Theprocessor-based system of claim 33 wherein the memory controllercomprises: a command queue that is operable to receive the memoryrequests, the memory queue further being operable to convert the memoryrequests into respective sets of command and address signals and tooutput the command and address signals in the order that the respectivememory requests were received; a command scheduler coupled to thecommand queue to receive the command and address signals from thecommand queue, the command scheduler arranging the timing of the commandand address signals; a micro command shifter coupled to receive thecommand and address signals from the command scheduler after the timingof the command and address signals have been arranged, the micro commandshifter being operable to output the command and address signals insynchronism with the operation of the memory devices; and a multiplexercoupled to the micro command shifter to receive the command signals orthe address signals from the micro command shifter, the multiplexerbeing operable to arrange the command or address signals in either thefirst configuration or the second configuration depending on whether thememory devices on the first surface or the memory devices on the secondsurface are being accessed, the multiplexer being operable to couple thecommand or address signals in either the first configuration or thesecond configuration to the interconnected terminals of the at least onememory module.
 35. The processor-based system of claim 34, furthercomprising a ring buffer coupled between the multiplexer and theinterconnected terminals of the memory devices.
 36. The processor-basedsystem of claim 33 wherein the memory devices each comprise a dynamicrandom access memory device.
 37. A memory hub having an input port and aplurality of output terminals, the memory hub being responsive to amemory request received at the input port to couple address and controlsignals to the output terminals, the address or control signals beingcoupled to the output terminals in a first configuration if the memoryrequest is directed to a first memory device located on a first surfaceof a substrate, the address or control signals being coupled to theoutput terminals in a second configuration if the memory request isdirected to a second memory device located on a second surface of thesubstrate, the second configuration being different from the firstconfiguration.
 38. The memory hub of claim 37 wherein the memory hubcomprises: a command queue that is operable to receive the memoryrequests, the memory queue further being operable to convert the memoryrequests into respective sets of command and address signals and tooutput the command and address signals in the order that the respectivememory requests were received; a command scheduler coupled to thecommand queue to receive the command and address signals from thecommand queue, the command scheduler arranging the timing of the commandand address signals; a micro command shifter coupled to receive thecommand and address signals from the command scheduler after the timingof the command and address signals have been arranged, the micro commandshifter being operable to output the command and address signals insynchronism with the operation of the memory devices; and a multiplexercoupled to the micro command shifter to receive the command signals orthe address signals from the micro command shifter, the multiplexerbeing operable to arrange the command or address signals in either thefirst configuration or the second configuration depending on whether thememory devices on the first surface or the memory devices on the secondsurface are being accessed, the multiplexer being operable to couple thecommand or address signals in either the first configuration or thesecond configuration to the interconnected terminals.
 39. The memory hubof claim 38, further comprising a ring buffer coupled between themultiplexer and the memory devices.
 40. The memory hub of claim 37wherein the command and address signals generated by the memory hubcomprise dynamic random access memory command and address signals.